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About MEMS
Diffusion: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Diffusion
Ion implantation
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Diffusion
Process characteristics:
Ambient
Ambient to which substrate is exposed during diffusion process (if known)
Ambient
Available
nitrogen
oxygen
phosphoryl chloride
Selected
other
Ambient to which substrate is exposed during diffusion process (if known)
Depth
Diffusion depth (at specified dopant concentration).
Depth
Å
µm
nm
Diffusion depth (at specified dopant concentration).
unconstrained
Dopant concentration
Dopant concentration at specified diffusion depth.
Dopant concentration
atom/cc
Dopant concentration at specified diffusion depth.
unconstrained
Dopant type
Doping element.
Dopant type
boron
germanium
other
phosphorus
Doping element.
Sides processed
Specify whether diffusion is to occur on a single or both sides of substrate.
Sides processed
both
either
Specify whether diffusion is to occur on a single or both sides of substrate.
Temperature
Preferred diffusion temperature (if known).
Temperature
°C
Preferred diffusion temperature (if known).
unconstrained
Equipment