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Silicon dioxide VLR700 PECVD: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Silicon dioxide VLR700 PECVD
Process characteristics:
Thickness
Thickness
*
µm
must be 0.01 .. 2 µm
0.01 .. 2 µm
Deposition rate
Rate at which material is added to a wafer
270 Å/min
Gas
5% Silane, Nitrous oxide, Helium
Material
silicon dioxide
Microstructure
amorphous
Pressure
Pressure of process chamber during processing
900 mTorr
Refractive index
1.45
Residual stress
-250 MPa
Sides processed
either
Temperature
250 °C
Wafer size
Wafer size
100 mm
Equipment
Unaxis VLR 700 PECVD
Equipment characteristics:
Batch sizes
100 mm: 25
Wafer geometry
Types of wafers this equipment can accept
1-flat
Wafer holder
Device that holds the wafers during processing.
cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm