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About MEMS
Resist ash: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Resist ash
Ambient
Ambient to which substrate is exposed during processing
oxygen
Batch size
25
Etch rate
1 µm/min
Etchant
Solutions and their concentrations.
oxygen
Material
photoresist (category)
Pressure
Pressure of process chamber during processing
1250 mTorr
Process duration
100 min
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 1
Sides processed
either
Temperature
90 .. 190 °C
Wafer size
Wafer size
100 mm
Equipment
Matrix Plasma Resist Stripper
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
pins
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator, quartz (single crystal)
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 550 µm
Comments:
Helps remove hardened photoresist. Use with wet PR stripper.